DMP2006

DMP2006UFG-7 vs DMP2006UFGQ-13 vs DMP2006UFG-13

 
PartNumberDMP2006UFG-7DMP2006UFGQ-13DMP2006UFG-13
DescriptionMOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nCMOSFET 20V P-CH Enhance ModeMOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current17.5 A40 A17.5 A
Rds On Drain Source Resistance5.5 mOhms5.5 mOhms7 mOhms
Vgs th Gate Source Threshold Voltage400 mV1 V1 V
Vgs Gate Source Voltage4.5 V10 V10 V
Qg Gate Charge64 nC200 nC140 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation41 W41 W41 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP2006-DMP2006
Transistor Type1 P-Channel-1 P-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time104 ns104 ns104 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time19 ns19 ns19 ns
Factory Pack Quantity200030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time146 ns146 ns146 ns
Typical Turn On Delay Time9.1 ns9.1 ns9.1 ns
Unit Weight0.002540 oz0.001058 oz0.002540 oz
Qualification-AEC-Q101-
Tradename--PowerDI
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMP2006UFG-7 MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC
DMP2006UFGQ-7 MOSFET 20V P-CH MOSFET
DMP2006UFGQ-13 MOSFET 20V P-CH Enhance Mode
DMP2006UFG-13 MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC
DMP2006UFG-7 IGBT Transistors MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC
DMP2006UFG-13 MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC
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