DMP2008

DMP2008UFG-7 vs DMP2008UFG-13 vs DMP2008UFG

 
PartNumberDMP2008UFG-7DMP2008UFG-13DMP2008UFG
DescriptionMOSFET 20V P-CH MOSFETMOSFET 20V P-CH MOSFET
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current14 A14 A-
Rds On Drain Source Resistance8 mOhms8 mOhms-
Vgs th Gate Source Threshold Voltage400 mV1 V-
Vgs Gate Source Voltage4.5 V8 V-
Qg Gate Charge72 nC72 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.2 W2.4 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMP2008DMP2008-
Transistor Type1 P-Channel1 P-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Forward Transconductance Min42 S--
Fall Time124 ns124 ns-
Product TypeMOSFETMOSFET-
Rise Time33 ns33 ns-
Factory Pack Quantity20003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time291 ns291 ns-
Typical Turn On Delay Time22 ns22 ns-
Unit Weight0.002540 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMP2008UFG-7 MOSFET 20V P-CH MOSFET
DMP2008UFG-13 MOSFET 20V P-CH MOSFET
DMP2008UFG New and Original
DMP2008UFG-7 Darlington Transistors MOSFET 20V P-CH MOSFET
DMP2008UFG-13 MOSFET 20V P-CH MOSFET
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