PartNumber | DMP21D0UFB4-7B | DMP21D0UFB4 | DMP21D0UFB4-7B MOSFET P- |
Description | MOSFET 20V P-Ch ENH Mode 495mOhm -4.5V -0.77A | ||
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | X2-DFN1006-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 770 mA | - | - |
Rds On Drain Source Resistance | 495 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
Vgs Gate Source Voltage | 4.5 V | - | - |
Qg Gate Charge | 1.5 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 990 mW | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Series | DMP21 | DMP21 | - |
Transistor Type | 1 P-Channel | 1 P-Channel | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 50 mS | - | - |
Fall Time | 18.5 ns | 18.5 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 8 ns | 8 ns | - |
Factory Pack Quantity | 10000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 31.7 ns | 31.7 ns | - |
Typical Turn On Delay Time | 7.1 ns | 7.1 ns | - |
Package Case | - | 3-XFDFN | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | X2-DFN1006-3 | - |
FET Type | - | MOSFET P-Channel, Metal Oxide | - |
Power Max | - | 430mW | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 80pF @ 10V | - |
FET Feature | - | Standard | - |
Current Continuous Drain Id 25°C | - | 770mA (Ta) | - |
Rds On Max Id Vgs | - | 495 mOhm @ 400mA, 4.5V | - |
Vgs th Max Id | - | 700mV @ 250μA | - |
Gate Charge Qg Vgs | - | 1.54nC @ 8V | - |
Pd Power Dissipation | - | 990 mW | - |
Vgs Gate Source Voltage | - | + /- 8 V | - |
Id Continuous Drain Current | - | - 1.17 A | - |
Vds Drain Source Breakdown Voltage | - | - 20 V | - |
Vgs th Gate Source Threshold Voltage | - | - 0.7 V | - |
Rds On Drain Source Resistance | - | 960 mOhms | - |
Qg Gate Charge | - | 1.5 nC | - |
Forward Transconductance Min | - | 50 mS | - |