DMP3099

DMP3099L-7 vs DMP3099LQ-13 vs DMP3099L-13

 
PartNumberDMP3099L-7DMP3099LQ-13DMP3099L-13
DescriptionMOSFET P-Ch ENH FET -30V 65mOhm -20V -3.8AMOSFET MOSFET BVDSS: 25V-30VMOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSY-Y
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current3.8 A3.8 A3.8 A
Rds On Drain Source Resistance65 mOhms65 mOhms65 mOhms
Vgs th Gate Source Threshold Voltage1 V2.1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge11 nC11 nC11 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.08 W1.08 W1.08 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP3099-DMP3099
Transistor Type1 P-Channel-1 P-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time15 ns15 ns15 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5 ns5 ns5 ns
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time31 ns31 ns31 ns
Typical Turn On Delay Time4.8 ns4.8 ns4.8 ns
Unit Weight0.001235 oz0.000317 oz0.000282 oz
Qualification-AEC-Q101-
Forward Transconductance Min-3.6 S-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMP3099L-7 MOSFET P-Ch ENH FET -30V 65mOhm -20V -3.8A
DMP3099LQ-7 MOSFET MOSFET BVDSS: 25V-30V
DMP3099LQ-13 MOSFET MOSFET BVDSS: 25V-30V
DMP3099L-13 MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
DMP3099L-7 New and Original
DMP3099L-7-F New and Original
DMP3099L-7-CUT TAPE New and Original
DMP3099LQ-13 MOSFET BVDSS: 25V30V SOT23 T&R 10K
DMP3099LQ-7 MOSFET BVDSS: 25V30V SOT23 T&R 3K
DMP3099L-13 Darlington Transistors MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A
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