DMP312

DMP3125L-13 vs DMP3120L-7 vs DMP3120L-7-F

 
PartNumberDMP3125L-13DMP3120L-7DMP3120L-7-F
DescriptionMOSFET MOSFET BVDSS: 25V-30VMOSFET P-CH 30V 2.8A SOT-23
ManufacturerDiodes IncorporatedZETEX/DIODES-
Product CategoryMOSFETFETs - Single-
TechnologySiMOSFET (Metal Oxide)-
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3TO-236-3, SC-59, SOT-23-3-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance76 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge3.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
BrandDiodes Incorporated--
Fall Time13.1 ns--
Product TypeMOSFET--
Rise Time6.3 ns--
Factory Pack Quantity10000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21.8 ns--
Typical Turn On Delay Time3.5 ns--
Series---
Packaging-Tape & Reel (TR)-
Part Status-Obsolete-
FET Type-P-Channel-
Drain to Source Voltage (Vdss)-30V-
Current Continuous Drain (Id) @ 25°C-2.8A (Ta)-
Drive Voltage (Max Rds On, Min Rds On)-2.5V, 4.5V-
Vgs(th) (Max) @ Id-1.4V @ 250A-
Gate Charge (Qg) (Max) @ Vgs-6.7nC @ 10V-
Vgs (Max)-±12V-
Input Capacitance (Ciss) (Max) @ Vds-285pF @ 15V-
FET Feature---
Power Dissipation (Max)-1.4W (Ta)-
Rds On (Max) @ Id, Vgs-120 mOhm @ 2.8A, 4.5V-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMP3125L-7 MOSFET MOSFET BVDSS: 25V-30V
DMP3125L-13 MOSFET MOSFET BVDSS: 25V-30V
DMP3120L-7 MOSFET P-CH 30V 2.8A SOT-23
DMP3120L-7-F New and Original
Top