 |  | | |
| PartNumber | DMS3015SSS-13 | DMS3015SSS | DMS3015SSS-13-F |
| Description | MOSFET MOSFET N-CHAN | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 8.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 30.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.55 W | - | - |
| Configuration | Single | - | - |
| Tradename | DIOFET | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMS30 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 18 S | - | - |
| Fall Time | 13.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 27.8 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 29.7 ns | - | - |
| Typical Turn On Delay Time | 15.8 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMS3015SSS-13 | MOSFET MOSFET N-CHAN | |
| DMS3015SSS-13 | Darlington Transistors MOSFET MOSFET N-CHAN | ||
| DMS3015SSS | New and Original | ||
| DMS3015SSS-13-F | New and Original | ||
| DMS3015SSS13 | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |