PartNumber | DMT10H010LSS-13 | DMT10H010LCT | DMT10H010LK3-13 |
Description | MOSFET MOSFET BVDSS | MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A | MOSFET MOSFET BVDSS 61V-100V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | SO-8 | TO-220-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 29.5 A | 98 A | - |
Rds On Drain Source Resistance | 14.5 mOhms | 6.9 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.4 V | 1.4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 53.7 nC | 53.7 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.9 W | 139 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Tube | Reel |
Series | DMT10H010 | DMT10H010 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 22 ns | 22 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14.1 ns | 14.1 ns | - |
Factory Pack Quantity | 2500 | 50 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42.9 ns | 42.9 ns | - |
Typical Turn On Delay Time | 11.6 ns | 11.6 ns | - |
Unit Weight | 0.017870 oz | 0.063493 oz | 0.011993 oz |