DMT10H010

DMT10H010LSS-13 vs DMT10H010LCT vs DMT10H010LK3-13

 
PartNumberDMT10H010LSS-13DMT10H010LCTDMT10H010LK3-13
DescriptionMOSFET MOSFET BVDSSMOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98AMOSFET MOSFET BVDSS 61V-100V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleSMD/SMT
Package / CaseSO-8TO-220-3TO-252-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current29.5 A98 A-
Rds On Drain Source Resistance14.5 mOhms6.9 mOhms-
Vgs th Gate Source Threshold Voltage1.4 V1.4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge53.7 nC53.7 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.9 W139 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelTubeReel
SeriesDMT10H010DMT10H010-
Transistor Type1 N-Channel1 N-Channel-
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time22 ns22 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time14.1 ns14.1 ns-
Factory Pack Quantity2500502500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time42.9 ns42.9 ns-
Typical Turn On Delay Time11.6 ns11.6 ns-
Unit Weight0.017870 oz0.063493 oz0.011993 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMT10H010LSS-13 MOSFET MOSFET BVDSS
DMT10H010LCT MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A
DMT10H010SPS-13 MOSFET MOSFET BVDSS: 61V-100V
DMT10H010LK3-13 MOSFET MOSFET BVDSS 61V-100V
DMT10H010LCT Trans MOSFET N-CH 100V 98A Automotive 3-Pin(3+Tab) TO-220AB Tube
DMT10H010LK3-13 100V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT10H010LPS New and Original
DMT10H010LSS New and Original
DMT10H010LSS-13 Trans MOSFET N-CH 100V 11.5A Automotive 8-Pin SO T/R
DMT10H010LPS-13 MOSFET N-CH 100V 9.4A
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