PartNumber | DMT10H015LFG-7 | DMT10H015LFG-13 | DMT10H015LFG |
Description | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerDI3333-8 | PowerDI3333-8 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 42 A | 42 A | - |
Rds On Drain Source Resistance | 13.5 mOhms | 13.5 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 33.3 nC | 33.3 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2 W | 2 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | PowerDI | PowerDI | - |
Packaging | Reel | Reel | - |
Height | 0.8 mm | 0.8 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | DMT10 | DMT10 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 3.3 mm | 3.3 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 8.1 ns | 8.1 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7 ns | 7 ns | - |
Factory Pack Quantity | 2000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 19.7 ns | 19.7 ns | - |
Typical Turn On Delay Time | 6.5 ns | 6.5 ns | - |
Unit Weight | 0.002540 oz | 0.002540 oz | - |