DMT10H015LF

DMT10H015LFG-7 vs DMT10H015LFG-13 vs DMT10H015LFG

 
PartNumberDMT10H015LFG-7DMT10H015LFG-13DMT10H015LFG
DescriptionMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0WMOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current42 A42 A-
Rds On Drain Source Resistance13.5 mOhms13.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge33.3 nC33.3 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2 W2 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenamePowerDIPowerDI-
PackagingReelReel-
Height0.8 mm0.8 mm-
Length3.3 mm3.3 mm-
SeriesDMT10DMT10-
Transistor Type1 N-Channel1 N-Channel-
Width3.3 mm3.3 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time8.1 ns8.1 ns-
Product TypeMOSFETMOSFET-
Rise Time7 ns7 ns-
Factory Pack Quantity20003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19.7 ns19.7 ns-
Typical Turn On Delay Time6.5 ns6.5 ns-
Unit Weight0.002540 oz0.002540 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMT10H015LFG-7 MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
DMT10H015LFG-13 MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W
DMT10H015LFG New and Original
DMT10H015LFG-13 Trans MOSFET N-CH 100V 10A Automotive 8-Pin PowerDI EP T/R
DMT10H015LFG-7 Trans MOSFET N-CH 100V 10A Automotive 8-Pin PowerDI EP T/R
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