PartNumber | DMTH4004LK3-13 | DMTH4004LPS-13 | DMTH4004LPSQ-13 |
Description | MOSFET 40V N-Ch Enh FET 3mOhm 10Vgs 100A | MOSFET MOSFET BVDSS: 31V-40V | MOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | PowerDI5060-8 | PowerDI5060-8 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Configuration | Single | - | Single |
Packaging | Reel | Reel | Reel |
Series | DMTH4004 | DMTH4004 | DMTH4004 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.011993 oz | 0.003386 oz | 0.003422 oz |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Id Continuous Drain Current | - | - | 100 A |
Rds On Drain Source Resistance | - | - | 2.5 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 69.6 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 175 C |
Pd Power Dissipation | - | - | 125 W |
Channel Mode | - | - | Enhancement |
Qualification | - | - | AEC-Q101 |
Fall Time | - | - | 6 ns |
Rise Time | - | - | 10.4 ns |
Typical Turn Off Delay Time | - | - | 24.4 ns |
Typical Turn On Delay Time | - | - | 9 ns |