PartNumber | DMTH6010LPD-13 | DMTH6010LK3Q-13 | DMTH6010LK3-13 |
Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI5060-C-8 | TO-252-3 | TO-252-3 |
Packaging | Reel | Reel | Reel |
Series | DMTH6010 | DMTH6010 | DMTH6010 |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.004092 oz | 0.011993 oz | 0.139332 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Id Continuous Drain Current | - | 70 A | 50 A |
Rds On Drain Source Resistance | - | 12 mOhms | 8 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1 V | 3 V |
Vgs Gate Source Voltage | - | 20 V | 10 V |
Qg Gate Charge | - | 41.3 nC | 41.3 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 60 W | 2.6 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Qualification | - | AEC-Q101 | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 9.7 ns | 9.7 ns |
Rise Time | - | 4.3 ns | 4.3 ns |
Typical Turn Off Delay Time | - | 23.4 ns | 23.4 ns |
Typical Turn On Delay Time | - | 5.7 ns | 5.7 ns |
Height | - | - | 2.29 mm |
Length | - | - | 6.58 mm |
Width | - | - | 6.1 mm |