DN314

DN3145N8-G vs DN3145N3-G vs DN3145N8

 
PartNumberDN3145N8-GDN3145N3-GDN3145N8
DescriptionMOSFET 450V 60OhmMOSFET 450V 60Ohm
ManufacturerMicrochip-Microchip Technology
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-89-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage450 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance60 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1.3 W--
ConfigurationSingle-Single
Channel ModeDepletion-Depletion
PackagingReel-Digi-ReelR Alternate Packaging
Height1.6 mm--
Length4.6 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel-1 N-Channel
TypeFET--
Width2.6 mm--
BrandMicrochip Technology--
Fall Time15 ns-15 ns
Product TypeMOSFET--
Rise Time15 ns-15 ns
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns-20 ns
Typical Turn On Delay Time10 ns-10 ns
Unit Weight0.001862 oz-0.001862 oz
Series---
Package Case--TO-243AA
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--TO-243AA (SOT-89)
FET Type--MOSFET N-Channel, Metal Oxide
Power Max--1.3W
Drain to Source Voltage Vdss--450V
Input Capacitance Ciss Vds--120pF @ 25V
FET Feature--Depletion Mode
Current Continuous Drain Id 25°C--100mA (Tj)
Rds On Max Id Vgs--60 Ohm @ 100mA, 0V
Vgs th Max Id---
Gate Charge Qg Vgs---
Pd Power Dissipation--1.3 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--100 mA
Vds Drain Source Breakdown Voltage--450 V
Rds On Drain Source Resistance--60 Ohms
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
DN3145N8-G MOSFET 450V 60Ohm
DN3145N3-G New and Original
DN3145N8 MOSFET 450V 60Ohm
DN3145N8-G MOSFET N-CH 450V 0.1A SOT89-3
DN3145N8-G-CUT TAPE New and Original
DN3145NB-G New and Original
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