DNLS32

DNLS320A-7 vs DNLS320A vs DNLS320A-7-F

 
PartNumberDNLS320A-7DNLS320ADNLS320A-7-F
DescriptionBipolar Transistors - BJT NPN 0.6W
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current2 A2 A-
Gain Bandwidth Product fT220 MHz220 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDNLS320DNLS320-
DC Current Gain hFE Max220 at 100 mA, 2 V220 at 0.1 A at 2 V-
Height1.1 mm--
Length3 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.4 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min220--
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.000282 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-600mW-
Transistor Type-NPN-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-220 @ 1A, 2V-
Vce Saturation Max Ib Ic-310mV @ 300mA, 3A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-220MHz-
Pd Power Dissipation-600 mW-
Collector Emitter Voltage VCEO Max-20 V-
Collector Base Voltage VCBO-20 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-220-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DNLS320E-13 Bipolar Transistors - BJT NPN 1W
DNLS320A-7 Bipolar Transistors - BJT NPN 0.6W
DNLS320A New and Original
DNLS320A-7-F New and Original
DNLS320E New and Original
DNLS320E-7-F New and Original
DNLS320A-7 Bipolar Transistors - BJT NPN 0.6W
DNLS320E-13 Bipolar Transistors - BJT NPN 1W
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