DNLS320E

DNLS320E-13 vs DNLS320E vs DNLS320E-7-F

 
PartNumberDNLS320E-13DNLS320EDNLS320E-7-F
DescriptionBipolar Transistors - BJT NPN 1W
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage450 mV--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDNLS320--
DC Current Gain hFE Max500 at 100 mA, 2 V--
Height1.6 mm--
Length6.5 mm--
PackagingReel--
Width3.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min150 at 6 A, 2 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DNLS320E-13 Bipolar Transistors - BJT NPN 1W
DNLS320E New and Original
DNLS320E-7-F New and Original
DNLS320E-13 Bipolar Transistors - BJT NPN 1W
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