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| PartNumber | DNLS320E-13 | DNLS320E | DNLS320E-7-F |
| Description | Bipolar Transistors - BJT NPN 1W | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 20 V | - | - |
| Collector Base Voltage VCBO | 20 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 450 mV | - | - |
| Maximum DC Collector Current | 8 A | - | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | DNLS320 | - | - |
| DC Current Gain hFE Max | 500 at 100 mA, 2 V | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 150 at 6 A, 2 V | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.003951 oz | - | - |