DSS20201L

DSS20201L-7 vs DSS20201L vs DSS20201L-7 , MAX6419UK2

 
PartNumberDSS20201L-7DSS20201LDSS20201L-7 , MAX6419UK2
DescriptionBipolar Transistors - BJT LOW VCE(SAT) NPN SMT
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage100 mV100 mV-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT150 MHz150 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDSS202DSS202-
DC Current Gain hFE Max200 at 10 mA, 2 V200 at 10 mA at 2 V-
Height1 mm--
Length2.9 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min200 at 2 A, 2 V--
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz0.000282 oz-
Package Case-TO-236-3, SC-59, SOT-23-3-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-23-3-
Power Max-600mW-
Transistor Type-NPN-
Current Collector Ic Max-2A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-200 @ 500mA, 2V-
Vce Saturation Max Ib Ic-100mV @ 200mA, 2A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-150MHz-
Pd Power Dissipation-600 mW-
Collector Emitter Voltage VCEO Max-20 V-
Collector Base Voltage VCBO-20 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-200 at 2 A 2 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DSS20201L-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS20201L-7 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
DSS20201L New and Original
DSS20201L-7 , MAX6419UK2 New and Original
DSS20201L-7-F New and Original
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