PartNumber | DSS5160TQ-7 | DSS5160FDB-7 | DSS5160T-7 |
Description | Bipolar Transistors - BJT SS Low Sat Transistor | Bipolar Transistors - BJT SS Low Sat Transistor | Bipolar Transistors - BJT SS Low Sat Transisto SOT23 T&R 3K |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Technology | Si | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Dual | Single |
Collector Emitter Voltage VCEO Max | - 60 V | - 60 V | - 60 V |
Collector Base Voltage VCBO | - 80 V | - 60 V | - 80 V |
Emitter Base Voltage VEBO | - 5 V | - 7 V | - 5 V |
Collector Emitter Saturation Voltage | - 340 mV | - 180 mV | - 340 mV |
Maximum DC Collector Current | - 2 A | - 1.5 A | - 2 A |
Gain Bandwidth Product fT | 150 MHz | 65 MHz | 150 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | DSS5160 | - | DSS51 |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Continuous Collector Current | - 1 A | - 1 A | - |
Pd Power Dissipation | 725 mW | 405 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | Transistors | Transistors |
RoHS | - | Y | Y |
Package / Case | - | U-DFN2020-6 | SOT-23-3 |
Packaging | - | Reel | Reel |
DC Collector/Base Gain hfe Min | - | 170 at - 100 mA, - 2 V | - |
Unit Weight | - | 0.000238 oz | 0.000282 oz |