DXT22

DXT2222A-13 vs DXT2222A vs DXT2222A-13-F

 
PartNumberDXT2222A-13DXT2222ADXT2222A-13-F
DescriptionBipolar Transistors - BJT 1000mW 40Vceo
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO75 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage1 V1 V-
Maximum DC Collector Current800 mA800 mA-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDXT2222DXT2222-
Height1.5 mm--
Length4.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min35 at 10 mA, 10 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.002540 oz0.001834 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-3-
Power Max-1W-
Transistor Type-NPN-
Current Collector Ic Max-600mA-
Voltage Collector Emitter Breakdown Max-40V-
DC Current Gain hFE Min Ic Vce-100 @ 150mA, 10V-
Vce Saturation Max Ib Ic-1V @ 50mA, 500mA-
Current Collector Cutoff Max-10nA (ICBO)-
Frequency Transition-300MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-40 V-
Collector Base Voltage VCBO-75 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-35 at 10 mA 10 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DXT2222A-13 Bipolar Transistors - BJT 1000mW 40Vceo
DXT2222A New and Original
DXT2222A-13-F New and Original
DXT2222A-13 Bipolar Transistors - BJT 1000mW 40Vceo
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