ECH8661

ECH8661-TL-H vs ECH8661 vs ECH8661-TL-HX

 
PartNumberECH8661-TL-HECH8661ECH8661-TL-HX
DescriptionMOSFET SWITCHING DEVICEINTEGRATED CIRCUIT
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseECH-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current7 A--
Rds On Drain Source Resistance24 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11.8 nC, 13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.3 W--
ConfigurationDual--
PackagingReel--
SeriesECH8661--
Transistor Type1 N-Channel, 1 P-Channel--
BrandON Semiconductor--
Forward Transconductance Min3.7 S, 5.2 S--
Fall Time25 ns, 42 ns--
Product TypeMOSFET--
Rise Time25 ns, 23 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time43 ns, 63 ns--
Typical Turn On Delay Time10 ns, 7.2 ns--
Unit Weight0.000674 oz--
Manufacturer Part # Description RFQ
ECH8661-TL-H MOSFET SWITCHING DEVICE
ECH8661 New and Original
ON Semiconductor
ON Semiconductor
ECH8661-TL-HX INTEGRATED CIRCUIT
ECH8661-TL-H IGBT Transistors MOSFET SWITCHING DEVICE
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