EDB5432BEB

EDB5432BEBH-1DAAT-F-R vs EDB5432BEBH-1DAAT-F-D vs EDB5432BEBH-1DAAT-F-R TR

 
PartNumberEDB5432BEBH-1DAAT-F-REDB5432BEBH-1DAAT-F-DEDB5432BEBH-1DAAT-F-R TR
DescriptionDRAM LPDDR2 512M 16MX32 FBGADRAM LPDDR2 512M 16MX32 FBGAIC DRAM 512M PARALLEL 134VFBGA
ManufacturerMicron TechnologyMicron Technology-
Product CategoryDRAMDRAM-
RoHSYY-
TypeSDRAM Mobile - LPDDR2SDRAM Mobile - LPDDR2-
Data Bus Width32 bit32 bit-
Organization16 M x 3216 M x 32-
Package / CaseVFBGA-134VFBGA-134-
Memory Size512 Mbit512 Mbit-
Maximum Clock Frequency533 MHz533 MHz-
Access Time5.5 ns5.5 ns-
Supply Voltage Max1.95 V1.95 V-
Supply Voltage Min1.14 V1.14 V-
Supply Current Max30 mA30 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 105 C+ 105 C-
SeriesEDBEDB-
PackagingReelTray-
BrandMicronMicron-
Mounting StyleSMD/SMTSMD/SMT-
Moisture SensitiveYesYes-
Product TypeDRAMDRAM-
Factory Pack Quantity10001520-
SubcategoryMemory & Data StorageMemory & Data Storage-
Manufacturer Part # Description RFQ
Micron
Micron
EDB5432BEBH-1DAAT-F-R DRAM LPDDR2 512M 16MX32 FBGA
EDB5432BEBH-1DIT-F-D DRAM LPDDR2 512M 16MX32 FBGA
EDB5432BEBH-1DAAT-F-D DRAM LPDDR2 512M 16MX32 FBGA
EDB5432BEBH-1DAAT-F-D IC DRAM 512M PARALLEL 134VFBGA
EDB5432BEBH-1DAAT-F-R TR IC DRAM 512M PARALLEL 134VFBGA
EDB5432BEBH-1DAUT-F-D DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 16Mx32 1.2V/1.8V 134-Pin VFBGA Dry
EDB5432BEBH-1DAUT-F-R TR IC DRAM 512M PARALLEL 134VFBGA
EDB5432BEBH-1DIT-F-D DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 16Mx32 1.2V/1.8V 134-Pin VFBGA
EDB5432BEBH-1DIT-F-R TR IC DRAM 512M PARALLEL 134VFBGA
EDB5432BEBH-1DAAT-F New and Original
EDB5432BEBH-1DAAT-F-R 512MB: X32 AUTOMOTIVE MOBILE LPDDR2 SDRAM
EDB5432BEBH-1DAAT-F-R T New and Original
EDB5432BEBH-1DAUT-F New and Original
EDB5432BEBH-1DAUT-F-R DRAM Chip Mobile LPDDR2 SDRAM 512Mbit 16Mx32 1.2V/1.8V 134-Pin VFBGA T/R
EDB5432BEBH-1DIT-F-R DRAM LPDDR2 512M 16MX32 FBGA
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