PartNumber | EFC6602R-A-TR | EFC6602R-A | EFC6602R-A-TR-T |
Description | MOSFET NCH+NCH 2.5V DRIVE SERIES | ||
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | WLCSP-4 | - | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 12 V | - | - |
Id Continuous Drain Current | 18 A | - | - |
Rds On Drain Source Resistance | 5.9 mOhms | - | - |
Packaging | Reel | Tape & Reel (TR) | - |
Series | EFC6602R | EFC6602R | - |
Brand | ON Semiconductor | - | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 5000 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.002413 oz | 0.002413 oz | - |
Package Case | - | 6-XFBGA | - |
Operating Temperature | - | 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 6-EFCP (2.7x1.81) | - |
FET Type | - | 2 N-Channel (Dual) Common Drain | - |
Power Max | - | 2W | - |
Drain to Source Voltage Vdss | - | - | - |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | Logic Level Gate, 2.5V Drive | - |
Current Continuous Drain Id 25°C | - | - | - |
Rds On Max Id Vgs | - | - | - |
Vgs th Max Id | - | - | - |
Gate Charge Qg Vgs | - | 55nC @ 4.5V | - |
Id Continuous Drain Current | - | 18 A | - |
Vds Drain Source Breakdown Voltage | - | 12 V | - |
Rds On Drain Source Resistance | - | 5.9 mOhms | - |