EFC6611R-A

EFC6611R-A-TF vs EFC6611R-A vs EFC6611R-A-TR

 
PartNumberEFC6611R-A-TFEFC6611R-AEFC6611R-A-TR
DescriptionMOSFET NCH+NCH 2.5V DRIVE SERIES
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseCSP-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current27 A--
Rds On Drain Source Resistance3.2 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesEFC6611R--
Transistor Type1 N-Channel--
BrandON Semiconductor--
Forward Transconductance Min19 S--
Development Kit---
Fall Time17700 ns--
Product TypeMOSFET--
Rise Time570 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38000 ns--
Typical Turn On Delay Time80 ns--
Unit Weight0.002116 oz--
Manufacturer Part # Description RFQ
EFC6611R-A-TF MOSFET NCH+NCH 2.5V DRIVE SERIES
EFC6611R-A New and Original
EFC6611R-A-TR New and Original
ON Semiconductor
ON Semiconductor
EFC6611R-A-TF MOSFET 2N-CH 12V 27A EFCP
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