 |  | | |
| PartNumber | EGF1BHE367A | EGF1BHE3/67A | EGF1BHE3/5CA |
| Description | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214BA | Rectifiers 100 Volt 1.0A 50ns Glass Passivated | Rectifiers 100 Volt 1.0A 50ns Glass Passivated |
| Manufacturer | - | Vishay Semiconductor Diodes Division | Vishay Semiconductor Diodes Division |
| Product Category | - | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
| Series | - | SUPERECTIFIERR | SUPERECTIFIERR |
| Product | - | Ultra Fast Recovery Rectifiers | Ultra Fast Recovery Rectifiers |
| Packaging | - | Tape & Reel (TR) Alternate Packaging | Tape & Reel (TR) Alternate Packaging |
| Unit Weight | - | 0.003668 oz | 0.003668 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | DO-214BA | DO-214BA |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | DO-214BA (GF1) | DO-214BA (GF1) |
| Configuration | - | Single | Single |
| Speed | - | Fast Recovery = 200mA (Io) | Fast Recovery = 200mA (Io) |
| Diode Type | - | Standard | Standard |
| Current Reverse Leakage Vr | - | 5μA @ 100V | 5μA @ 100V |
| Voltage Forward Vf Max If | - | 1V @ 1A | 1V @ 1A |
| Voltage DC Reverse Vr Max | - | 100V | 100V |
| Current Average Rectified Io | - | 1A | 1A |
| Reverse Recovery Time trr | - | 50ns | 50ns |
| Capacitance Vr F | - | 15pF @ 4V, 1MHz | 15pF @ 4V, 1MHz |
| Operating Temperature Junction | - | -65°C ~ 175°C | -65°C ~ 175°C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Minimum Operating Temperature | - | - 65 C | - 65 C |
| Vf Forward Voltage | - | 1 V | 1 V |
| Vr Reverse Voltage | - | 100 V | 100 V |
| Ir Reverse Current | - | 5 uA | 5 uA |
| If Forward Current | - | 1 A | 1 A |
| Max Surge Current | - | 30 A | 30 A |
| Recovery Time | - | 50 ns | 50 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay Semiconductors |
EGF1BHE3_A/H | Rectifiers 1A,100V,50NS AEC-Q101 Qualified | |
| EGF1BHE3_A/I | Rectifiers 1A,100V,50NS AEC-Q101 Qualified | ||
| EGF1BHE367A | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-214BA | ||
Vishay |
EGF1BHE3_A/H | DIODE GEN PURP 100V 1A DO214BA | |
| EGF1BHE3_A/I | DIODE GEN PURP 100V 1A DO214BA | ||
| EGF1BHE3/67A | Rectifiers 100 Volt 1.0A 50ns Glass Passivated | ||
| EGF1BHE3/5CA | Rectifiers 100 Volt 1.0A 50ns Glass Passivated |