 |  | | |
| PartNumber | EMD4DXV6T1G | EMD4DXV6T1 | EMD4DXV6T5 |
| Description | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital | Bipolar Transistors - Pre-Biased Dual Complementary | Bipolar Transistors - Pre-Biased Dual Complementary |
| Manufacturer | ON Semiconductor | - | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | - | - |
| Configuration | Dual | - | Dual |
| Transistor Polarity | NPN, PNP | - | NPN PNP |
| Typical Input Resistor | 47 kOhms | - | 47 kOhms at NPN 10 kOhms at PNP |
| Typical Resistor Ratio | 1, 0.21 | - | 1 at NPN 0.21 at PNP |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-553-5 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | 0.1 A |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 357 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | EMD4DXV6 | - | EMD4DXV6 |
| Packaging | Reel | - | Tape & Reel (TR) Alternate Packaging |
| DC Current Gain hFE Max | 80 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Number of Channels | 2 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000099 oz | - | 0.000099 oz |
| Package Case | - | - | SOT-563, SOT-666 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| Power Max | - | - | 500mW |
| Transistor Type | - | - | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 47k, 10k |
| Resistor Emitter Base R2 Ohms | - | - | 47k |
| DC Current Gain hFE Min Ic Vce | - | - | 80 @ 5mA, 10V |
| Vce Saturation Max Ib Ic | - | - | 250mV @ 300μA, 10mA |
| Current Collector Cutoff Max | - | - | 500nA |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | - | - | 357 mW |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| DC Collector Base Gain hfe Min | - | - | 80 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| EMD4DXV6T5G | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital | ||
| EMD4DXV6T1G | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital | ||
| EMD4DXV6T1 | Bipolar Transistors - Pre-Biased Dual Complementary | ||
| EMD4DXV6T5 | Bipolar Transistors - Pre-Biased Dual Complementary | ||
ON Semiconductor |
EMD4DXV6T5G | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital | |
| EMD4DXV6T1G | Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital |