PartNumber | EMF8 | EMF8132A3PF-DW-F-D | EMF8164A3ME-DV-F-D |
Description | LPDDR3 8G 256MX32 FBGA DDP - Bulk (Alt: EMF8132A3PF-DW-F-D) | LPDDR3 8G 128MX64 FBGA DDP - Bulk (Alt: EMF8164A3ME-DV-F-D) | |
Manufacturer | Rohm Semiconductor | - | - |
Product Category | Transistors (BJT) - Arrays, Pre-Biased | - | - |
Series | EMF8 | - | - |
Packaging | Tape & Reel (TR) | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | SOT-563, SOT-666 | - | - |
Mounting Type | Surface Mount | - | - |
Supplier Device Package | EMT6 | - | - |
Configuration | Dual | - | - |
Power Max | 150mW | - | - |
Transistor Type | 1 NPN Pre-Biased, 1 NPN | - | - |
Current Collector Ic Max | 100mA, 500mA | - | - |
Voltage Collector Emitter Breakdown Max | 50V, 12V | - | - |
Resistor Base R1 Ohms | 47k | - | - |
Resistor Emitter Base R2 Ohms | 47k | - | - |
DC Current Gain hFE Min Ic Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V | - | - |
Vce Saturation Max Ib Ic | 300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA | - | - |
Current Collector Cutoff Max | 500nA | - | - |
Frequency Transition | 250MHz, 320MHz | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Collector Emitter Voltage VCEO Max | 12 V at TR1 | - | - |
Transistor Polarity | NPN | - | - |
DC Collector Base Gain hfe Min | 270 | - | - |
Typical Input Resistor | 47 kOhms | - | - |
Typical Resistor Ratio | 1 | - | - |
Peak DC Collector Current | 500 mA at TR1 100 mA at TR2 | - | - |