EMF8

EMF8 vs EMF8132A3PF-DW-F-D vs EMF8164A3ME-DV-F-D

 
PartNumberEMF8EMF8132A3PF-DW-F-DEMF8164A3ME-DV-F-D
DescriptionLPDDR3 8G 256MX32 FBGA DDP - Bulk (Alt: EMF8132A3PF-DW-F-D)LPDDR3 8G 128MX64 FBGA DDP - Bulk (Alt: EMF8164A3ME-DV-F-D)
ManufacturerRohm Semiconductor--
Product CategoryTransistors (BJT) - Arrays, Pre-Biased--
SeriesEMF8--
PackagingTape & Reel (TR)--
Mounting StyleSMD/SMT--
Package CaseSOT-563, SOT-666--
Mounting TypeSurface Mount--
Supplier Device PackageEMT6--
ConfigurationDual--
Power Max150mW--
Transistor Type1 NPN Pre-Biased, 1 NPN--
Current Collector Ic Max100mA, 500mA--
Voltage Collector Emitter Breakdown Max50V, 12V--
Resistor Base R1 Ohms47k--
Resistor Emitter Base R2 Ohms47k--
DC Current Gain hFE Min Ic Vce68 @ 5mA, 5V / 270 @ 10mA, 2V--
Vce Saturation Max Ib Ic300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA--
Current Collector Cutoff Max500nA--
Frequency Transition250MHz, 320MHz--
Maximum Operating Temperature+ 150 C--
Minimum Operating Temperature- 55 C--
Collector Emitter Voltage VCEO Max12 V at TR1--
Transistor PolarityNPN--
DC Collector Base Gain hfe Min270--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio1--
Peak DC Collector Current500 mA at TR1 100 mA at TR2--
Manufacturer Part # Description RFQ
EMF8T2R Bipolar Transistors - Pre-Biased NPN
EMF8 New and Original
EMF8132A3PF-DW-F-D LPDDR3 8G 256MX32 FBGA DDP - Bulk (Alt: EMF8132A3PF-DW-F-D)
EMF8164A3ME-DV-F-D LPDDR3 8G 128MX64 FBGA DDP - Bulk (Alt: EMF8164A3ME-DV-F-D)
EMF8164A3PF-DW-F-D LPDDR3 8G 128MX64 FBGA DDP - Bulk (Alt: EMF8164A3PF-DW-F-D)
EMF8T New and Original
EMF8T2R TRANS NPN PREBIAS/NPN 0.15W EMT6
Micron
Micron
EMF8132A3MA-DV-F-D LPDDR3 SPECIAL/CUSTOM PLASTIC GR
EMF8132A3PB-DV-F-D IC SDRAM LPDDR3 8G NANA FBGA DDP
EMF8132A3PF-DV-F-R TR LPDDR3 SPECIAL/CUSTOM PLASTIC VF
EMF8132A3PF-DV-F-D LPDDR3 SPECIAL/CUSTOM PLASTIC VF
EMF8164A3PK-DV-F-D LPDDR3 SPECIAL/CUSTOM PLASTIC
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