PartNumber | F3L150R07W2E3_B11 | F3L150R07W2E3B11BOMA1 | F3L150R12W2H3B11BPSA1 |
Description | IGBT Modules IGBT MODULES 650V 150A | IGBT MODULE VCES 600V 150A | IGBT MODULE VCES 600V 150A |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | IGBT-Inverter | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.45 V | - | - |
Continuous Collector Current at 25 C | 150 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 335 W | - | - |
Package / Case | Module | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | SMD/SMT | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 15 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | F3L150R07W2E3B11BOMA1 SP000638568 | - | - |
Unit Weight | 1.375685 oz | - | - |