F4-50R12

F4-50R12KS4 vs F4-50R12KS4_B11

 
PartNumberF4-50R12KS4F4-50R12KS4_B11
DescriptionIGBT Modules N-CH 1.2KV 70AIGBT Modules IGBT Module 50A 1200V
ManufacturerInfineonInfineon
Product CategoryIGBT ModulesIGBT Modules
RoHSYY
ProductIGBT Silicon Modules-
ConfigurationQuad-
Collector Emitter Voltage VCEO Max1200 V-
Collector Emitter Saturation Voltage3.75 V-
Continuous Collector Current at 25 C70 A-
Gate Emitter Leakage Current400 nA-
Pd Power Dissipation355 W-
Package / CaseEcono 2-
Minimum Operating Temperature- 40 C-
Maximum Operating Temperature+ 125 C-
PackagingTrayTray
Height17 mm-
Length107.5 mm-
Width45 mm-
BrandInfineon TechnologiesInfineon Technologies
Mounting StyleChassis Mount-
Maximum Gate Emitter Voltage20 V-
Product TypeIGBT ModulesIGBT Modules
Factory Pack Quantity1010
SubcategoryIGBTsIGBTs
Part # AliasesF450R12KS4BOSA1 SP000100431F450R12KS4B11BOSA1 SP000924500
Unit Weight6.349313 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
F4-50R12KS4 IGBT Modules N-CH 1.2KV 70A
F4-50R12KS4_B11 IGBT Modules IGBT Module 50A 1200V
F4-50R12KS4_B11 IGBT Modules IGBT Module 50A 1200V
F4-50R12KS4 IGBT Modules N-CH 1.2KV 70A
F4-50R12KS4ENG New and Original
F4-50R12MS4 Trans IGBT Module N-CH 1.2KV 70A 14-Pin ECONOD - Bulk (Alt: F4-50R12MS4)
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