PartNumber | F423MR12W1M1B11BOMA1 | F4200R17N3E4BPSA1 | F4200R06KL4BOSA1 |
Description | Discrete Semiconductor Modules | LOW POWER ECONO | MOD IGBT LOW PWR ECONO3-4 |
Manufacturer | Infineon | - | - |
Product Category | Discrete Semiconductor Modules | - | - |
RoHS | Y | - | - |
Product | Power MOSFET Modules | - | - |
Type | CoolSiC MOSFET | - | - |
Vf Forward Voltage | 4.6 V at 50 A | - | - |
Vgs Gate Source Voltage | - 10 V, 20 V | - | - |
Mounting Style | Screw Mount | - | - |
Package / Case | AG-EASY1BM-2 | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Configuration | Fourpack | - | - |
Brand | Infineon Technologies | - | - |
Transistor Polarity | N-Channel | - | - |
Fall Time | 11.5 ns | - | - |
Id Continuous Drain Current | 50 A | - | - |
Pd Power Dissipation | 20 mW | - | - |
Product Type | Discrete Semiconductor Modules | - | - |
Rds On Drain Source Resistance | 22.5 mOhms | - | - |
Rise Time | 8.4 ns | - | - |
Factory Pack Quantity | 24 | - | - |
Subcategory | Discrete Semiconductor Modules | - | - |
Tradename | EasyPACK CoolSiC MOSFET | - | - |
Typical Turn Off Delay Time | 49.4 ns | - | - |
Typical Turn On Delay Time | 14.3 ns | - | - |
Vds Drain Source Breakdown Voltage | 1200 V | - | - |
Vgs th Gate Source Threshold Voltage | 3.45 V | - | - |
Part # Aliases | F4-23MR12W1M1_B11 SP001710600 | - | - |