 | | | |
| PartNumber | F475R07W1H3B11ABOMA1 | F475R06W1E3BOMA1 | F475R07W2H3B51BOMA1 |
| Description | IGBT Modules | IGBT MODULE VCES 600V 75A | MOD DIODE BRIDGE EASY2B-2-1 |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 24 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | F4-75R07W1H3_B11A SP001050464 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
F475R07W1H3B11ABOMA1 | IGBT Modules | |
| F475R06W1E3BOMA1 | IGBT MODULE VCES 600V 75A | ||
| F475R07W1H3B11ABOMA1 | IGBT MODULES | ||
| F475R07W2H3B51BOMA1 | MOD DIODE BRIDGE EASY2B-2-1 | ||
| F475R07W2H3B51BPSA1 | MOD DIODE BRIDGE EASY2B-2-1 | ||
| F475R06W1E3 | IGBT Module, Transistor Polarity:N Channel, DC Collector Current:75A, Collector Emitter Saturation Voltage Vce(on):600V, Power Dissipation Pd:275W, Collector Emitter Voltage V(br)ceo:600V, No. o |