PartNumber | FCD380N60E | FCD360N65S3R0 | FCD3400N80Z |
Description | MOSFET 600V N-Channel MOSFET | MOSFET SUPERFET3 650V 10A 360 mOhm | IGBT Transistors MOSFET SuperFET2 800V 850mOhm Zene |
Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
Id Continuous Drain Current | 10.2 A | 10 A | - |
Rds On Drain Source Resistance | 380 mOhms | 360 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | - |
Vgs Gate Source Voltage | 30 V | 30 V | - |
Qg Gate Charge | 34 nC | 18 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 106 W | 83 W | - |
Configuration | Single | Single | Single |
Tradename | SuperFET II | - | - |
Packaging | Reel | Reel | Reel |
Height | 2.39 mm | - | - |
Length | 6.73 mm | - | - |
Product | MOSFET | - | - |
Series | FCD380N60E | SuperFET3 | - |
Transistor Type | 1 N-Channel | - | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor | - |
Forward Transconductance Min | 10 S | 6 S | - |
Fall Time | 10 ns | 10 ns | 14 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 9 ns | 11 ns | 6.4 ns |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 64 ns | 34 ns | 22.7 ns |
Typical Turn On Delay Time | 17 ns | 12 ns | 10 ns |
Unit Weight | 0.009184 oz | - | 0.139332 oz |
Channel Mode | - | Enhancement | Enhancement |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 32 W |
Vgs Gate Source Voltage | - | - | 20 V 30 V |
Id Continuous Drain Current | - | - | 2 A |
Vds Drain Source Breakdown Voltage | - | - | 800 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.5 V |
Rds On Drain Source Resistance | - | - | 3.4 Ohms |
Qg Gate Charge | - | - | 7.4 nC |
Forward Transconductance Min | - | - | 2 S |