FCD600N6

FCD600N60Z vs FCD600N65S3R0

 
PartNumberFCD600N60ZFCD600N65S3R0
DescriptionMOSFET 600V N-Channel MOSFETMOSFET SUPERFET3 650V 10A 360 mOhm
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V
Id Continuous Drain Current7.4 A6 A
Rds On Drain Source Resistance600 mOhms600 mOhms
Vgs th Gate Source Threshold Voltage3.5 V2.5 V
Vgs Gate Source Voltage20 V30 V
Qg Gate Charge20 nC11 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation89 W54 W
ConfigurationSingleSingle
TradenameSuperFET II-
PackagingReelReel
Height2.39 mm-
Length6.73 mm-
ProductMOSFET-
SeriesFCD600N60ZSuperFET3
Transistor Type1 N-Channel-
Width6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor
Forward Transconductance Min6.7 S3.6 S
Fall Time8 ns14 ns
Product TypeMOSFETMOSFET
Rise Time7 ns9 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time39 ns29 ns
Typical Turn On Delay Time13 ns11 ns
Unit Weight0.009184 oz-
Channel Mode-Enhancement
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCD600N60Z MOSFET 600V N-Channel MOSFET
ON Semiconductor
ON Semiconductor
FCD600N65S3R0 MOSFET SUPERFET3 650V 10A 360 mOhm
FCD600N60Z MOSFET N CH 600V 7.4A DPAK
FCD600N65S3R0 SUPERFET3 650V DPAK PKG
FCD600N60 New and Original
FCD600N60ZF New and Original
Top