FCP190N65

FCP190N65F vs FCP190N65S3 vs FCP190N65S3R0

 
PartNumberFCP190N65FFCP190N65S3FCP190N65S3R0
DescriptionMOSFET SF2 650V 190MOHM F TO220MOSFET SuperFET3 650V 190 mOhm, TO220F PKGMOSFET N-CH 650V 190MOHM TO220 I
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage650 V650 V-
Id Continuous Drain Current20.6 A17 A-
Rds On Drain Source Resistance190 mOhms159 mOhms-
Vgs th Gate Source Threshold Voltage5 V2.5 V-
Vgs Gate Source Voltage20 V30 V-
Qg Gate Charge60 nC33 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation208 W144 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameSuperFET II FRFET--
PackagingTubeTube-
Height16.3 mm--
Length10.67 mm--
SeriesFCP190N65FFCP190N65S3-
Transistor Type1 N-Channel1 N-Channel-
Width4.7 mm--
BrandON Semiconductor / FairchildON Semiconductor-
Forward Transconductance Min18 S10 S-
Fall Time4.2 ns16 ns-
Product TypeMOSFETMOSFET-
Rise Time11 ns22 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time62 ns57 ns-
Typical Turn On Delay Time25 ns20 ns-
Unit Weight0.063493 oz0.063493 oz-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FCP190N65F MOSFET SF2 650V 190MOHM F TO220
ON Semiconductor
ON Semiconductor
FCP190N65S3 MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
FCP190N65F MOSFET N-CH 650V 20.6A TO220-3
FCP190N65S3 MOSFET N-CH 650V 17A TO220-3
FCP190N65S3R0 MOSFET N-CH 650V 190MOHM TO220 I
FCP190N65 New and Original
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