FDA59

FDA59N30 vs FDA59N25 vs FDA59N20

 
PartNumberFDA59N30FDA59N25FDA59N20
DescriptionMOSFET 500V NCH MOSFETMOSFET N-CH 250V 59A TO-3P
ManufacturerON SemiconductorFCS-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current59 A--
Rds On Drain Source Resistance56 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height20.1 mm--
Length16.2 mm--
SeriesFDA59N30--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm--
BrandON Semiconductor / Fairchild--
Fall Time200 ns170 ns-
Product TypeMOSFET--
Rise Time575 ns480 ns-
Factory Pack Quantity450--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns90 ns-
Typical Turn On Delay Time140 ns70 ns-
Part # AliasesFDA59N30_NL--
Unit Weight0.225789 oz0.225789 oz-
Package Case-TO-3P-3-
Pd Power Dissipation-392 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-59 A-
Vds Drain Source Breakdown Voltage-250 V-
Rds On Drain Source Resistance-49 mOhms-
Forward Transconductance Min-45 S-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDA59N30 MOSFET 500V NCH MOSFET
ON Semiconductor
ON Semiconductor
FDA59N25 MOSFET N-CH 250V 59A TO-3P
FDA59N30 MOSFET N-CH 300V 59A TO-3P
FDA59N20 New and Original
FDA59N30 59N30 New and Original
FDA59N30,FDA50N50 New and Original
FDA59N30,FDA50N50,FDA59N New and Original
FDA59N30,FDA59N30LDTU, New and Original
FDA59N30-FSC New and Original
FDA59N30/ New and Original
FDA59N30LDTU New and Original
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