PartNumber | FDB035AN06A0 | FDB035AN06A0-F085 | FDB035AN06A0_F085 |
Description | MOSFET N-Channel PowerTrench | MOSFET N-Chan PowerTrench MOSFET | IGBT Transistors MOSFET N-Chan PowerTrench MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 80 A | 80 A | - |
Rds On Drain Source Resistance | 3.2 mOhms | 3.2 mOhms | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 310 W | 310 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | PowerTrench | - | - |
Packaging | Reel | Reel | Reel |
Height | 4.83 mm | 4.83 mm | - |
Length | 10.67 mm | 10.67 mm | - |
Series | FDB035AN06A0 | FDB035AN06_F085 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.65 mm | 9.65 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Fall Time | 13 ns | 13 ns | 13 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 93 ns | 93 ns | 93 ns |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 38 ns | 38 ns | 38 ns |
Typical Turn On Delay Time | 15 ns | 15 ns | 15 ns |
Part # Aliases | FDB035AN06A0_NL | FDB035AN06A0_F085 | - |
Unit Weight | 0.046296 oz | 0.046296 oz | 0.046296 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Qg Gate Charge | - | 95 nC | - |
Qualification | - | AEC-Q101 | - |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 310 W |
Id Continuous Drain Current | - | - | 80 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 3.2 mOhms |
Qg Gate Charge | - | - | 95 nC |