FDB12

FDB120N10 vs FDB120N10TM vs FDB12N50

 
PartNumberFDB120N10FDB120N10TMFDB12N50
DescriptionMOSFET 100V N-Chan 12Mohm PowerTrench
ManufacturerON Semiconductor-FAIRCHILD
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current74 A--
Rds On Drain Source Resistance9.7 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation170 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFDB120N10--
Transistor Type1 N-Channel--
TypePower Trench MOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min105 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time105 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time27 ns--
Unit Weight0.046296 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB120N10 MOSFET 100V N-Chan 12Mohm PowerTrench
FDB12N50TM MOSFET 500V N-CH MOSFET
FDB12N50FTM-WS MOSFET 500V 11.5A 0.7Ohm N-Channel
FDB12N50FTM_WS Darlington Transistors MOSFET 500V 11.5A 0.7Ohm N-Channel
FDB120N10TM New and Original
FDB12N50 New and Original
FDB12N50F New and Original
FDB12N50FTM - Bulk (Alt: FDB12N50FTM)
FDB12N50TMTR New and Original
FDB12N50U New and Original
FDB12N50UTM TRANS MOSFET N-CH 500V 10A - Bulk (Alt: FDB12N50UTM)
FDB12N50UTM_12 New and Original
FDB12N60 New and Original
FDB12P20 New and Original
FDB12P20TM New and Original
ON Semiconductor
ON Semiconductor
FDB120N10 MOSFET NCH 100V 74A D2PAK
FDB12N50FTM-WS MOSFET N-CH 500V 11.5A D2PAK
FDB12N50TM MOSFET N-CH 500V 11.5A D2PAK
FDB12N50UTM_WS MOSFET N-CH 500V 10A D2PAK
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