FDB363

FDB3632 vs FDB3632-F085 vs FDB3632_SB82115

 
PartNumberFDB3632FDB3632-F085FDB3632_SB82115
DescriptionMOSFET N-Channel PowerTrenchMOSFET 100V N-Channel PowerTrench MOSFETINTEGRATED CIRCUIT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance7.5 mOhms7.5 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation310 W310 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFDB3632FDB3632_F085-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time46 ns46 ns-
Product TypeMOSFETMOSFET-
Rise Time39 ns39 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time96 ns96 ns-
Typical Turn On Delay Time30 ns30 ns-
Part # AliasesFDB3632_NLFDB3632_F085-
Unit Weight0.046296 oz0.046296 oz-
Vgs th Gate Source Threshold Voltage-4 V-
Qg Gate Charge-84 nC-
Qualification-AEC-Q101-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB3632 MOSFET N-Channel PowerTrench
FDB3632-F085 MOSFET 100V N-Channel PowerTrench MOSFET
ON Semiconductor
ON Semiconductor
FDB3632 MOSFET N-CH 100V 80A D2PAK
FDB3632-F085 MOSFET N-CH 100V 12A D2PAK
FDB3632_SB82115 INTEGRATED CIRCUIT
FDB3632-NL New and Original
FDB3632/ New and Original
FDB3632_F085 N-CHANNEL POWERTRENCH MOSFET
FDB3632-CUT TAPE New and Original
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