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| PartNumber | FDC6320C | FDC6320 | FDC6320C , LM4040AIX3-3. |
| Description | MOSFET SSOT-6 COMP N-P-CH | ||
| Manufacturer | ON Semiconductor | Fairchild Semiconductor | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SSOT-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 220 mA, 120 mA | - | - |
| Rds On Drain Source Resistance | 10.6 Ohms | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 900 mW | - | - |
| Configuration | Dual | N-Channel P-Channel | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 1.1 mm | - | - |
| Length | 2.9 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | FDC6320C | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Type | FET | - | - |
| Width | 1.6 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 0.2 S, 0.135 S | - | - |
| Fall Time | 4.5 ns, 6 ns | 4.5 ns 6 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.5 ns, 6 ns | 4.5 ns 6 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4 ns, 7.4 ns | 4 ns 7.4 ns | - |
| Typical Turn On Delay Time | 5 ns, 6 ns | 5 ns 6 ns | - |
| Part # Aliases | FDC6320C_NL | - | - |
| Unit Weight | 0.001058 oz | 0.001270 oz | - |
| Part Aliases | - | FDC6320C_NL | - |
| Package Case | - | SOT-23-6 Thin, TSOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 6-SSOT | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 700mW | - |
| Drain to Source Voltage Vdss | - | 25V | - |
| Input Capacitance Ciss Vds | - | 9.5pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 220mA, 120mA | - |
| Rds On Max Id Vgs | - | 4 Ohm @ 400mA, 4.5V | - |
| Vgs th Max Id | - | 1.5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 0.4nC @ 4.5V | - |
| Pd Power Dissipation | - | 900 mW | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Id Continuous Drain Current | - | 220 mA - 120 mA | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Rds On Drain Source Resistance | - | 10.6 Ohms | - |
| Forward Transconductance Min | - | 0.2 S 0.135 S | - |