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| PartNumber | FDC642P-F085P | FDC642P-F085 | FDC642P-F095 |
| Description | MOSFET P-ChannelPowerMosfet | MOSFET P-CHANNEL 2.5V PowerTrench MOS | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SuperSOT-6 | SSOT-6 | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor / Fairchild | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | FDC642P_F085P | FDC642P_F085 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 4 A | - |
| Rds On Drain Source Resistance | - | 65 mOhms | - |
| Vgs Gate Source Voltage | - | 8 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1.6 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Tradename | - | PowerTrench | - |
| Height | - | 1.1 mm | - |
| Length | - | 2.9 mm | - |
| Product | - | MOSFET Small Signal | - |
| Series | - | FDC642P_F085 | - |
| Transistor Type | - | 1 P-Channel | - |
| Type | - | Power Trench MOSFET | - |
| Width | - | 1.6 mm | - |
| Forward Transconductance Min | - | 9 S | - |
| Fall Time | - | 35 ns | - |
| Rise Time | - | 19 ns | - |
| Typical Turn Off Delay Time | - | 26 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |
| Unit Weight | - | 0.001270 oz | - |