PartNumber | FDD26AN06A0-F085 | FDD26AN06A0 |
Description | MOSFET 60V N-CHAN PwrTrench 60V 36A 26mOhm | MOSFET 60V 36A 26 OHM N-CH |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | T |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V |
Id Continuous Drain Current | 36 A | 36 A |
Rds On Drain Source Resistance | 20 mOhms | 26 mOhms |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 75 W | 75 W |
Configuration | Single | Single |
Qualification | AEC-Q101 | - |
Packaging | Reel | Reel |
Height | 2.39 mm | 2.39 mm |
Length | 6.73 mm | 6.73 mm |
Series | FDD26AN06_F085 | - |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Part # Aliases | FDD26AN06A0_F085 | FDD26AN06A0_NL |
Unit Weight | 0.009184 oz | 0.139332 oz |
Vgs Gate Source Voltage | - | 20 V |
Channel Mode | - | Enhancement |
Fall Time | - | 35 ns |
Rise Time | - | 72 ns |
Typical Turn Off Delay Time | - | 23 ns |
Typical Turn On Delay Time | - | 9 ns |