 | | |
| PartNumber | FDD5810-F085 | FDD5810 |
| Description | MOSFET LOW VOLTAGE | MOSFET LOW VOLTAGE |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 7.7 A | 35 A |
| Rds On Drain Source Resistance | 48 mOhms | 16.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 88 W | 88 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Tradename | PowerTrench | - |
| Packaging | Reel | Reel |
| Height | 2.39 mm | 2.39 mm |
| Length | 6.73 mm | 6.73 mm |
| Series | FDD5810_F085 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 34 ns | 34 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 75 ns | 75 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 26 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns |
| Part # Aliases | FDD5810_F085 | - |
| Unit Weight | 0.009184 oz | 0.139332 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD5810-F085 | MOSFET LOW VOLTAGE | |
| FDD5810 | MOSFET LOW VOLTAGE | ||
ON Semiconductor |
FDD5810 | MOSFET N-CH 60V 37A DPAK | |
| FDD5810-F085 | MOSFET N-CH 60V 37A DPAK | ||
| FDD5810_F085 | 60V, 35A, 27 OHM, NCH, POWER T |