| PartNumber | FDD86367-F085 | FDD86367 | FDD86369 |
| Description | MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET | MOSFET MV7 80/20V 1000A N-chanPwrTrnchMOSFET | MOSFET N-CHANNEL 80V 90A TO252 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 100 A | 100 A | - |
| Rds On Drain Source Resistance | 8.4 mOhms | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 68 nC | 88 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 227 W | 227 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FDD86367_F085 | FDD86367 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 16 ns | 16 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 49 ns | 49 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 36 ns | 36 ns | - |
| Typical Turn On Delay Time | 20 ns | 20 ns | - |
| Part # Aliases | FDD86367_F085 | - | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | - |