FDD8656

FDD86567-F085 vs FDD86567_F085 vs FDD86561-F085

 
PartNumberFDD86567-F085FDD86567_F085FDD86561-F085
DescriptionMOSFET NMOS DPAK 60V 3.2 MOHMMV7 60/20V 1000A N-CHANNEL POWMOSFET N-CH 60V 45A DPAK
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance6 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge63 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation227 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height2.39 mm--
Length6.73 mm--
SeriesFDD86567_F085--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time13 ns13 ns-
Product TypeMOSFET--
Rise Time45 ns45 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time32 ns32 ns-
Typical Turn On Delay Time24 ns24 ns-
Part # AliasesFDD86567_F085--
Unit Weight0.020776 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-227 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-100 A-
Vds Drain Source Breakdown Voltage-60 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-6 mOhms-
Qg Gate Charge-63 nC-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDD86569-F085 MOSFET 60/20V 90A N-chnl PowerTrench MOSFET
FDD86567-F085 MOSFET NMOS DPAK 60V 3.2 MOHM
FDD86567_F085 MV7 60/20V 1000A N-CHANNEL POW
ON Semiconductor
ON Semiconductor
FDD86569-F085 MOSFET N-CH 60V 90A DPAK
FDD86561-F085 MOSFET N-CH 60V 45A DPAK
FDD86567-F085 MOSFET N-CH 60V 100A DPAK
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