 |  |  | |
| PartNumber | FDD9409L-F085 | FDD9409-F085 | FDD9409 |
| Description | MOSFET N-channel Power Trench MOSFET | MOSFET N-channel Power Trench MOSFET | - Bulk (Alt: FDD9409) |
| Manufacturer | ON Semiconductor | ON Semiconductor | Fairchild Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 90 A | 90 A | - |
| Rds On Drain Source Resistance | 2.1 mOhms | 3.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 3.2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 68 nC | 42 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 150 W | 150 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Fall Time | 10 ns | 15 ns | 15 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 13 ns | 22 ns | 22 ns |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 36 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 10 ns | 23 ns | 23 ns |
| Part # Aliases | FDD9409L_F085 | FDD9409_F085 | - |
| Unit Weight | 0.009184 oz | 0.009184 oz | 0.009184 oz |
| Tradename | - | PowerTrench | - |
| Height | - | 2.39 mm | - |
| Length | - | 6.73 mm | - |
| Series | - | FDD9409_F085 | - |
| Width | - | 6.22 mm | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 150 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 90 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3.2 V |
| Rds On Drain Source Resistance | - | - | 3.2 mOhms |
| Qg Gate Charge | - | - | 42 nC |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDD9409L-F085 | MOSFET N-channel Power Trench MOSFET | |
| FDD9409-F085 | MOSFET N-channel Power Trench MOSFET | ||
| FDD9409 | - Bulk (Alt: FDD9409) | ||
| FDD9409L_F085 | N-Channel Logic Level PowerTrench MOSFET | ||
| FDD9409_F085 | N-CHANNEL POWERTRENCH MOSFET | ||
ON Semiconductor |
FDD9409-F085 | MOSFET N-CH 40V 90A TO252 | |
| FDD9409L-F085 | NMOS DPAK 40V 2.6 MOHM |