| PartNumber | FDG6318PZ | FDG6318P |
| Description | MOSFET Dual PCh Digital | MOSFET Dual PCh Digital |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-323-6 | SOT-323-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 500 mA | 500 mA |
| Rds On Drain Source Resistance | 780 mOhms | 780 mOhms |
| Vgs Gate Source Voltage | 12 V | 12 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 300 mW | 300 mW |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 2 mm | 2 mm |
| Product | MOSFET Small Signal | MOSFET Small Signal |
| Series | FDG6318PZ | FDG6318P |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Type | FET | FET |
| Width | 1.25 mm | 1.25 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 1.1 S | 1.1 S |
| Fall Time | 13 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 13 ns | 12 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 6 ns |
| Typical Turn On Delay Time | 10 ns | 6 ns |
| Unit Weight | 0.000988 oz | 0.000988 oz |
| Part # Aliases | - | FDG6318P_NL |