FDG6332

FDG6332C vs FDG6332C , MAX6826TUT vs FDG6332C--

 
PartNumberFDG6332CFDG6332C , MAX6826TUTFDG6332C--
DescriptionMOSFET 20V N&P-Channel Power Trench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current700 mA--
Rds On Drain Source Resistance300 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation300 mW--
ConfigurationDual--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.1 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesFDG6332C--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min2.8 S, 1.8 S--
Fall Time7 ns, 14 ns--
Product TypeMOSFET--
Rise Time7 ns, 14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time9 ns, 6 ns--
Typical Turn On Delay Time5 ns, 5.5 ns--
Part # AliasesFDG6332C_NL--
Unit Weight0.000988 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDG6332C-F085 MOSFET 20V N&P Chan PowerTrench
FDG6332C MOSFET 20V N&P-Channel Power Trench
FDG6332C-F085P MOSFET DUAL NP MOS SC70-6 20V
FDG6332C_F085 IGBT Transistors MOSFET 20V N&P Chan PowerTrench
FDG6332C , MAX6826TUT New and Original
FDG6332C-G New and Original
FDG6332C-NL New and Original
FDG6332C-PG New and Original
FDG6332C-CUT TAPE New and Original
FDG6332C-F085-CUT TAPE New and Original
FDG6332C-- New and Original
ON Semiconductor
ON Semiconductor
FDG6332C-F085 MOSFET N/P-CH 20V SC70-6
FDG6332C New and Original
FDG6332C-F085P DUAL NP MOS SC70-6 20V
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