FDI03

FDI030N06 vs FDI0302-100K vs FDI0302-R10M-C01

 
PartNumberFDI030N06FDI0302-100KFDI0302-R10M-C01
DescriptionMOSFET NCH 60V 3.0Mohm
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current193 A--
Rds On Drain Source Resistance3.2 mOhms--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation231 W--
ConfigurationSingle--
TradenamePowerTrench--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
SeriesFDI030N06--
Transistor Type1 N-Channel--
TypeN-Channel MOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min154 S--
Fall Time33 ns--
Product TypeMOSFET--
Rise Time178 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time54 ns--
Typical Turn On Delay Time39 ns--
Unit Weight0.084199 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDI038AN06A0 MOSFET 60V 80a 0.0038 Ohms/VGS=10V
FDI030N06 MOSFET NCH 60V 3.0Mohm
FDI0302-100K New and Original
FDI0302-R10M-C01 New and Original
FDI038AN New and Original
FDI038AN06A0_NL Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
FDI038AN06AD New and Original
FDI038AN06AO New and Original
FDI038AN06AO 38N06 New and Original
FDI038N06AO New and Original
ON Semiconductor
ON Semiconductor
FDI030N06 MOSFET N-CH 60V 120A I2PAK
FDI038AN06A0 MOSFET N-CH 60V 80A TO-262AB
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