PartNumber | FDI045N10A-F102 | FDI040N06 | FDI045N10A |
Description | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | MOSFET PT3 Low Qg 60V, 4.0Mohm | MOSFET N-CH 100V 120A I2PAK-3 |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-262-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | - |
Id Continuous Drain Current | 120 A | 168 A | - |
Rds On Drain Source Resistance | 3.8 mOhms | 3.2 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 54 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 263 W | 231 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | Tube | - |
Height | 7.88 mm | 7.88 mm | - |
Length | 10.29 mm | 10.29 mm | - |
Series | FDI045N10A | FDI040N06 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.83 mm | 4.83 mm | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Forward Transconductance Min | 132 S | 169 S | - |
Fall Time | 15 ns | 24 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 26 ns | 40 ns | - |
Factory Pack Quantity | 1000 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 50 ns | 55 ns | - |
Typical Turn On Delay Time | 23 ns | 30 ns | - |
Part # Aliases | FDI045N10A_F102 | - | - |
Unit Weight | 0.073511 oz | 0.073511 oz | - |
Type | - | N-Channel MOSFET | - |