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| PartNumber | FDI045N10A-F102 | FDI040N06 | FDI045N10A |
| Description | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | MOSFET PT3 Low Qg 60V, 4.0Mohm | MOSFET N-CH 100V 120A I2PAK-3 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 60 V | - |
| Id Continuous Drain Current | 120 A | 168 A | - |
| Rds On Drain Source Resistance | 3.8 mOhms | 3.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 54 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 263 W | 231 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | - |
| Height | 7.88 mm | 7.88 mm | - |
| Length | 10.29 mm | 10.29 mm | - |
| Series | FDI045N10A | FDI040N06 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.83 mm | 4.83 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 132 S | 169 S | - |
| Fall Time | 15 ns | 24 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 26 ns | 40 ns | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 50 ns | 55 ns | - |
| Typical Turn On Delay Time | 23 ns | 30 ns | - |
| Part # Aliases | FDI045N10A_F102 | - | - |
| Unit Weight | 0.073511 oz | 0.073511 oz | - |
| Type | - | N-Channel MOSFET | - |