FDI04

FDI045N10A-F102 vs FDI040N06 vs FDI045N10A

 
PartNumberFDI045N10A-F102FDI040N06FDI045N10A
DescriptionMOSFET N-Channel PwrTrench 100V 164A 4.5mOhmMOSFET PT3 Low Qg 60V, 4.0MohmMOSFET N-CH 100V 120A I2PAK-3
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-262-3TO-262-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V60 V-
Id Continuous Drain Current120 A168 A-
Rds On Drain Source Resistance3.8 mOhms3.2 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge54 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation263 W231 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeTube-
Height7.88 mm7.88 mm-
Length10.29 mm10.29 mm-
SeriesFDI045N10AFDI040N06-
Transistor Type1 N-Channel1 N-Channel-
Width4.83 mm4.83 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min132 S169 S-
Fall Time15 ns24 ns-
Product TypeMOSFETMOSFET-
Rise Time26 ns40 ns-
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time50 ns55 ns-
Typical Turn On Delay Time23 ns30 ns-
Part # AliasesFDI045N10A_F102--
Unit Weight0.073511 oz0.073511 oz-
Type-N-Channel MOSFET-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDI045N10A-F102 MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm
FDI040N06 MOSFET PT3 Low Qg 60V, 4.0Mohm
ON Semiconductor
ON Semiconductor
FDI040N06 MOSFET N-CH 60V 120A I2PAK
FDI045N10A MOSFET N-CH 100V 120A I2PAK-3
FDI045N10A-F102 MOSFET N-CH 100V 120A I2PAK-3
FDI047AN08A0 MOSFET N-CH 75V 80A TO-262AB
FDI044AN03L New and Original
FDI045N10AF102 New and Original
FDI045N10A_F102 100V 4.5MOHM I2PAK 3L JEDEC
FDI047AN08 New and Original
FDI047AN08AO New and Original
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