FDMC667

FDMC6679AZ vs FDMC6675BZ vs FDMC6675BZ-T

 
PartNumberFDMC6679AZFDMC6675BZFDMC6675BZ-T
DescriptionMOSFET -30V P-Channel Power TrenchMOSFET -30V 20A P-Channel PowerTrenchINTEGRATED CIRCUIT
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePower-33-8Power-33-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current20 A9.5 A-
Rds On Drain Source Resistance10 mOhms14.4 mOhms-
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge37 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation41 W2.3 W-
ConfigurationSingleSingle-
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height0.8 mm0.8 mm-
Length3.3 mm3.3 mm-
SeriesFDMC6679AZFDMC6675BZ-
Transistor Type1 P-Channel1 P-Channel-
Width3.3 mm3.3 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min46 S--
Product TypeMOSFETMOSFET-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.005832 oz0.007055 oz-
Channel Mode-Enhancement-
Fall Time-26 ns-
Rise Time-10 ns-
Typical Turn Off Delay Time-44 ns-
Typical Turn On Delay Time-11 ns-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDMC6679AZ MOSFET -30V P-Channel Power Trench
FDMC6675BZ MOSFET -30V 20A P-Channel PowerTrench
ON Semiconductor
ON Semiconductor
FDMC6675BZ MOSFET P-CH 30V 9.5A POWER33
FDMC6679AZ MOSFET P-CH 30V POWER33
FDMC6675BZ-T INTEGRATED CIRCUIT
FDMC6676BZ SINGLEST3PZINMLP3.3X3.3 (Alt: FDMC6676BZ)
FDMC6676BZ-P New and Original
FDMC6679AZ_P New and Original
FDMC6675BZ-CUT TAPE New and Original
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