 |  | | |
| PartNumber | FDMS3672 | FDMS3669S | FDMS3668S |
| Description | MOSFET 100V N-Ch UltraFET PowerTrench MOSFET | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | Power-56-8 | Power-56-8 | Power-56-8 |
| Number of Channels | 1 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 30 V | 30 V |
| Id Continuous Drain Current | 7.4 A | 60 A | 13 A, 18 A |
| Rds On Drain Source Resistance | 19 mOhms | 10 mOhms | 8 mOhms, 5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V, 12 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W | 2.2 W, 2.5 W |
| Configuration | Single | Dual | Dual |
| Channel Mode | Enhancement | - | - |
| Tradename | UltraFET | Power Stage PowerTrench | Power Stage PowerTrench |
| Packaging | Reel | Reel | Reel |
| Height | 0.8 mm | 1.1 mm | 1.1 mm |
| Length | 6 mm | 6 mm | 6 mm |
| Series | FDMS3672 | FDMS3669S | FDMS3668S |
| Transistor Type | 1 N-Channel | 2 N-Channel | 2 N-Channel |
| Type | MOSFET | - | - |
| Width | 5 mm | 5 mm | 5 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 20 S | 113 S | - |
| Fall Time | 8 ns | 3 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 3 ns | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 36 ns | 24 ns | - |
| Typical Turn On Delay Time | 23 ns | 9 ns | - |
| Unit Weight | 0.007408 oz | 0.006032 oz | 0.006032 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Qg Gate Charge | - | 34 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDMS3686S | MOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET | |
| FDMS3672 | MOSFET 100V N-Ch UltraFET PowerTrench MOSFET | ||
| FDMS3669S | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | ||
| FDMS3668S | MOSFET PowerStage Dual N-Ch PowerTrench MOSFET | ||
ON Semiconductor |
FDMS3668S | MOSFET 2N-CH 30V 13A/18A 8-PQFN | |
| FDMS3669S | MOSFET 2N-CH 30V 13A/18A PWR56 | ||
| FDMS3672 | MOSFET N-CH 100V 7.4A POWER56-8 | ||
| FDMS3686S | MOSFET 2N-CH 30V 13A/23A 8-PQFN | ||
| FDMS3669S-SN00345 | New and Original |