 | | |
| PartNumber | FDMS3602AS | FDMS3602S |
| Description | MOSFET DUAL N-CH. ER TRENCH MO | MOSFET 25V Dual N-Channel PowerTrench MOSFET |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | Power-56-8 | Power-56-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Dual | Dual |
| Tradename | Power Stage PowerTrench | Power Stage PowerTrench |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 6 mm | 6 mm |
| Series | FDMS3602AS | FDMS3602S |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 5 mm | 5 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.006032 oz | 0.003175 oz |
| Vds Drain Source Breakdown Voltage | - | 25 V |
| Id Continuous Drain Current | - | 15 A |
| Rds On Drain Source Resistance | - | 5.6 mOhms |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 19 nC, 45 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Pd Power Dissipation | - | 2.5 W |
| Forward Transconductance Min | - | 67 S, 132 S |
| Fall Time | - | 1.8 ns, 3.2 ns |
| Rise Time | - | 2 ns, 4.2 ns |
| Typical Turn Off Delay Time | - | 19 nS, 31 nS |
| Typical Turn On Delay Time | - | 7.9 nS, 12 nS |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDMS3602AS | MOSFET DUAL N-CH. ER TRENCH MO | |
| FDMS3602S | MOSFET 25V Dual N-Channel PowerTrench MOSFET | ||
ON Semiconductor |
FDMS3602AS | MOSFET 2N-CH 25V 15A/26A POWER56 | |
| FDMS3602S | MOSFET 2N-CH 25V 15A/26A POWER56 | ||
| FDMS3602S_P | Trans MOSFET N-CH 25V 30A/40A 8-Pin PQFN T/R (Alt: FDMS3602S-P) |