PartNumber | FDMS86320 | FDMS86322 |
Description | MOSFET N-Chan PowerTrench MOSFET 80V, 22A | MOSFET 80V N-Channel PowerTrench MOSFET |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | Power-56-8 | Power-56-8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V |
Id Continuous Drain Current | 22 A | 13 A |
Rds On Drain Source Resistance | 11.7 mOhms | 7.65 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 69 W | 104 W |
Configuration | Single | Single |
Tradename | PowerTrench | PowerTrench |
Packaging | Reel | Reel |
Height | 1.1 mm | 1.1 mm |
Length | 6 mm | 6 mm |
Series | FDMS86320 | FDMS86322 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 5 mm | 5 mm |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 0.002610 oz | 0.002402 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V |
Qg Gate Charge | - | 55 nC |
Forward Transconductance Min | - | 45 S |
Fall Time | - | 13 ns |
Rise Time | - | 20 ns |