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FDN561

FDN5618P vs FDN5614P vs FDN5618P , LTV-357T-A-G

 
PartNumberFDN5618PFDN5614PFDN5618P , LTV-357T-A-G
DescriptionMOSFET SSOT-3 P-CH 60V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current1.2 A--
Rds On Drain Source Resistance170 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN5618P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.3 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16.5 ns--
Typical Turn On Delay Time6.5 ns--
Part # AliasesFDN5618P_NL--
Unit Weight0.001058 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild 		FDN5618P MOSFET SSOT-3 P-CH 60V
FDN5614P New and Original
FDN5618P , LTV-357T-A-G New and Original
FDN5618P-NL New and Original
FDN5618P-NL , 1N5250BTA New and Original
FDN5618PDKR-ND New and Original
FDN5618P-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor 		FDN5618P MOSFET P-CH 60V 1.25A SSOT3
FDN5618P_G INTEGRATED CIRCUIT
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